搜索筛选:
搜索耗时5.3324秒,为你在为你在102,285,761篇论文里面共找到 2 篇相符的论文内容
发布年度:
[期刊论文] 作者：XUE Fang-Shi,
来源：中国物理快报（英文版） 年份：2001
A Gunn active layer is used as an X electron probe to detect the X tunnelling current in the GaAs-AlAs heterostructure, from which a new heterostructure interva...
,A Substitution for the High-κ Dielectric in an AIGaN/GaN Metal-insulator-Semiconductor Heterostruct
[期刊论文] 作者：KONG Yue-Chan,XUE Fang-Shi,ZHOU Jian-Jun,LI Liang,CHEN Chen,JIANG Wen-Hai,
来源：中国物理快报（英文版） 年份：2012
Paraelectric state ferroelectric material is proposed as a novel substitution for the conventional high-k dielectric used in AIGaN/GaN metal-insulator-semicondu...
相关搜索：
