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[期刊论文] 作者：XiangLi,XiaodanWang,HaiMa,FeifeiChen,XionghuiZeng,
来源：ChineseOpticsLetters 年份：2019
In this work, Er-doped aluminum nitride (AlN), Pr-doped AlN, and Er, Pr co-doped AlN thin films were prepared by ion implantation. After annealing, the luminescence properties were investigated by cathodoluminescence. Some new and interesti......
Investigation of low-temperature cathodoluminescence mechanism of Er-doped GaN thick films by ion im
[期刊论文] 作者：XiaodanWang,YajuanMo,XionghuiZeng,HongminMao,JianfengWang,andKeXu,
来源：ChineseOpticsLetters 年份：2016
Er ions are implanted into the GaN thick films grown by hydride vapor phase epitaxy. The implantation energy is 200 keV and the implantation doses are...
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