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搜索耗时2.1752秒,为你在为你在102,285,761篇论文里面共找到 14 篇相符的论文内容
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[期刊论文] 作者：Li-wei Wang,Zheng Xu,Fu-jun Zh,
来源：矿物冶金与材料学报 年份：2004
The microstructural, optical, and magnetic properties and room-temperature photoluminescence (PL) of Mn-doped ZnO thin films were studied. The chemical composit...
,Leakage current reduction by thermal oxidation in Ni/Au Schottky contacts on lattice-matched In0.18
[期刊论文] 作者：Lin Fang,Shen Bo,Lu Li-Wu,Xu Fu-Jun,Liu Xin-Yu,Wei Ke,
来源：中国物理B（英文版） 年份：2014
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[期刊论文] 作者：TANG Ning,HAN Kui,LU Fang-Chao,DUAN Jun-Xi,XU Fu-Jun,SHEN Bo,
来源：中国物理快报（英文版） 年份：2011
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[期刊论文] 作者：Liu Fang,Qin Zhi-Xin,Xu Fu-Jun,Zhao Sheng,Kang Xiang-Ning,Shen Bo,Zhang Guo-Yi,
来源：中国物理B（英文版） 年份：2011
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,Different temperature dependence of carrier transport properties between Alx Ga1-xN/InyGa1-yN/GaN a
[期刊论文] 作者：Song Jie,Xu Fu-Jun,Huang Cheng-Cheng,Lin Fang,Wang Xin-Qiang,Yang Zhi-Jian,Shen Bo,
来源：中国物理B（英文版） 年份：2011
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,Epitaxial evolution on buried cracks in a strain-controlled AlN/GaN superlattice interlayer between
[期刊论文] 作者：Huang Cheng-Cheng,Zhang Xia,Xu Fu-Jun,Xu Zheng-Yu,Chen Guang,Yang Zhi-Jian,Tang Ning,
来源：中国物理B（英文版） 年份：2014
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[期刊论文] 作者：Yu-Yang Zhao,Dong-Liang Xu,Fu-Jun Zhao,Bang-Min Han,Yi Shao,Wei Zhao,Shu-Jie Xia,
来源：亚洲男性学杂志（英文版） 年份：2014
Some published evidence has revealed that the dendritic cells can interact with pathogens that exist in the inner foreskin. This information provides a new vision that pathogens could play a role through the redundant prepuce; numerous stud......
,Scattering behaviour of a two-dimensional electron gas induced by Al composition fluctuation in Alx
[期刊论文] 作者：Wang Yan,Shen Bo,Xu Fu-Jun,Huang Sen,Miao Zhen-Lin,Lin Fang,Yang Zhi-Jian,Zhang Guo-Yi,
来源：中国物理B（英文版） 年份：2009
This paper reports that cathodoluminescence (CL) measurements have been done to study the alloy fluctuation of the Al0.3Ca0.7N layer in Al0.3Ca0.7N/GaN heterost...
[期刊论文] 作者：PAN Jian-Hai,WANG Xin-Qiang,CHEN Guang,LIU Shi-Tao,FENG Li,XU Fu-Jun,TANG Ning,SHEN Bo,
来源：中国物理快报（英文版） 年份：2011
We investigate epitaxy of AlN layers on sapphire substrates by molecular beam epitaxy.It is found that an atomically fiat surface can be obtained under Al-rich...
,The leakage current mechanisms in the Schottky diode with a thin Al layer insertion between Al0.245
[期刊论文] 作者：Liu Fang,Wang Tao,Shen Bo,Huang Sen,Lin Fang,Ma Nan,Xu Fu-Jun,Wang Peng,Yao Jian-Quan,
来源：中国物理B（英文版） 年份：2009
This paper investigates the behaviour of the reverse-bias leakage current of the Sehottky diode with a thin Al inserting layer inserted between Al0.245Ga0.755N/...
[期刊论文] 作者：Liu Fang,Wang Tao,Shen So,Huang Sen,Lin Fang,Ma Nan,Xu Fu-Jun,Wang Peng,Yao Jian-Quan,
来源：中国物理B（英文版） 年份：2009
Recently GaN-based high electron mobility transistors(HEMTs)have revealed the superior properties of a high breakdown field and high electron saturation velocit...
[期刊论文] 作者：Yun-Fei Xu,Fu-Jun Ge,Bo Han,Xiao-Qing Yang,Hong Su,An-Cheng Zhao,Ming-Hong Zhao,Yu-Bao Yang,Jie Yang,,
来源：World Journal of Gastroenterology 年份：2015
AIM:To evaluate the prognostic value of high-mobility group box 1(HMGB1) expression in intrahepatic cholangiocarcinoma(IHCC) and the possible underlying mechani...
[期刊论文] 作者：WANG Mao-Jun,SHEN Bo,XU Fu-Jun,WANG Yan,XU Jian,HUANG Sen,YANG Zhi-Jian,QIN Zhi-Xin,ZHANG Guo-Yi,
来源：中国物理快报（英文版） 年份：2007
High temperature transport characteristics of unintentionally doped GaN have been investigated by means of high temperature Hall measurements from room temperat...
,Performance comparison of Pt/Au and Ni/Au Schottky contacts on AlxGa1-x N/GaN heterostructures at h
[期刊论文] 作者：Lin Fang,Shen Bo,Lu Li-Wu,Ma Nan,Xu Fu-Jun,Miao Zhen-Lin,Song Jie,Liu Xin-Yu,Wei Ke,Huang Jun,
来源：中国物理B（英文版） 年份：2010
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