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[期刊论文] 作者：ZOU Xiao,XU Jing-ping,
来源：功能材料与器件学报 年份：2009
Surface pretreatments for preparing HfTiO/GeOxNy stack gate dielectric on n-Ge substrate have been investigated.Excellent performances of Al/HfTiO/GeOxNy /n-Ge...
[期刊论文] 作者：ZOU Xiao,XU Jing-ping,,
来源：城市道桥与防洪 年份：2009
该文从挂篮荷载计算、施工流程、支座及临时固结施工、挂篮安装及试验、合拢段施工、模板制作安装、钢筋安装、混凝土的浇筑及养生、测量监控等方面人手,介绍了S226海滨大桥...
[期刊论文] 作者：Ji Feng,Xu Jing-Ping,Lai Pui-To,
来源：中国物理（英文版） 年份：2007
In this paper, a threshold voltage model for high-κgate-dielectric metal-oxide-semiconductor field-effect transistors (MOSFETs) is developed, with more accurat...
,Effect of initial linear chirp on collision characteristics of two solitons in the birefringent fib
[期刊论文] 作者：Zheng Hong-Jun,Liu Shan-Liang,Xu Jing-Ping,
来源：中国物理（英文版） 年份：2007
The collision characteristics of the orthogonally polarized solitons with initial linear frequency chirp in the linear birefringent fibre for β2＜0 are numerical...
[期刊论文] 作者：Liu Chao-Wen,Xu Jing-Ping,Liu Lu,Lu Han-Han,
来源：中国物理B（英文版） 年份：2015
...
,Improved interface properties of an HfO2 gate dielectric GaAs MOS device by using SiNx as an interf
[期刊论文] 作者：Zhu Shu-Yan,Xu Jing-Ping,Wang Li-Sheng,Huang Yuan,
来源：中国物理B（英文版） 年份：2004
...
,Electrical properties and reliability of HfO2 gate-dielectric MOS capacitors with trichloroethylene
[期刊论文] 作者：Xu Jing-Ping,Chen Wei-Bing,Lai Pui-To,Li Yan-Ping,Chan Chu-Lok,
来源：中国物理（英文版） 年份：2007
Trichloroethylene (TCE) pretreatment of Si surface prior to HfO2 deposition is employed to fabricate HfO2 gatedielectric MOS capacitors. Influence of this proce...
,Effect of interface-roughness scattering on mobility degradation in SiGe p-MOSFETs with a high-k di
[期刊论文] 作者：Zhang Xue-Feng,Xu Jing-Ping,Lai Pui-To,Li Chun-Xia,Guan Jian-Guo,
来源：中国物理B（英文版） 年份：2007
A physical model for mobility degradation by interface-roughness scattering and Coulomb scattering is proposed for SiGe p-MOSFET with a high-k dielectric/SiO2 g...
[期刊论文] 作者：Chen Wei-Bing,Xu Jing-Ping,Lai Pui-To,Li Yan-Ping,Xu Sheng-Guo,Chan Chu-Lok,
来源：中国物理（英文版） 年份：2006
The paper reports that HfTiO dielectric is deposited by reactive co-sputtering of Hf and Ti targets in an Ar/O2 ambience, followed by an annealing in different...
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