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[期刊论文] 作者:Yang FENG,Fei WANG,Xuepeng ZHAN,Yuan LI,Jiezhi CHEN, 来源:中国科学:信息科学(英文版) 年份:2021
Dear editor,rnMany emerging non-volatile memories (NVM),such as re-sistive random access memory (RRAM)[1],phase-change memory (PCM)[2],and ferroelectric RAM (FeRAM)[3],together with the conventional flash memory[4,5],have demonstrated their......
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