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Bending characteristics of flexible amorphous InGaZnO thin film transistors with organic/inorganic m
[会议论文] 作者：Y. G. Seol,N.-E. Lee,
来源：2011年第三届微电子及等离子体技术国际会议 年份：2011
In the display industry,transition metal oxide (TMO) materials have been reported as promising candidates replacing a-Si:H and poly-Si semiconductor due to the advantages of a low-cost low-temperature...
[会议论文] 作者：Y. G. Seol,
来源：2011年第三届微电子及等离子体技术国际会议 年份：2011
Development of the flexible materials with optical transparency,mechanical stability,light weight,low-cost farbication,and electrical stability is required for the application of the flexible and stre...
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