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[期刊论文] 作者:MA KaiSheng,CUI XiaoXin,LIAO Kai,LIAO Nan,WU Di,YU DunShan,, 来源:Science China(Information Sciences) 年份:2015
Due to its excellent device features, manufacture process compatibility and diversity of the circuit structures, The Fin FET is considered appropriate candidate...
[期刊论文] 作者:Fang Ran,Lu Wengao,Wang Guannan,Tao Tingting,Zhang Yacong,Chen Zhongjian,Yu Dunshan, 来源:城市道桥与防洪 年份:2013
该文从挂篮荷载计算、施工流程、支座及临时固结施工、挂篮安装及试验、合拢段施工、模板制作安装、钢筋安装、混凝土的浇筑及养生、测量监控等方面人手,介绍了S226海滨大桥...
[期刊论文] 作者:LIAO Nan,CUI XiaoXin,LIAO Kai,MA KaiSheng,WU Di,WEI Wei,LI Rui,YU DunShan,, 来源:Science China(Information Sciences) 年份:2014
With the aggressive scaling of device technology,the leakage power has become the main part of power consumption,which seriously reduces the energy recovery efc...
[期刊论文] 作者:LIAO Kai,CUI XiaoXin,LIAO Nan,MA KaiSheng,WU Di,WEI Wei,LI Rui,YU DunShan,, 来源:Science China(Information Sciences) 年份:2014
With the technology scaling down,low power dissipation has become one of the research focuses in the field of integrated circuit design.Various types of adiabat...
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