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Thin relaxed SiGe layer grown on Ar^＋ ion implanted Si substrate by ultra-high vacuum chemical vapor
[期刊论文] 作者：CHENChang-Chun,YUBen-Hai,LIUJi,
来源：核技术：英文版 年份：2005
Thin strain-relaxed Si0.81Ge0.19 films (95 nm) on the Ar+ ion implanted Si substrates with different energies (30 keV, 40 keV and 60 keV) at the same implanted...
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