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[期刊论文] 作者：Yang Lin-An(杨林安),Yu Chun-Li(于春利),Zhang Yi-Men(张义门),Zhang Yu-Ming(张玉明),
来源：中国物理（英文版） 年份：2003
The process-related surface state effect is investigated the fabrication of SiC devices, and a nonlinear model for 4H-SiC power metal-semiconductor field effect...
[期刊论文] 作者：Wang Shou-Guo(王守国),Yang Lin-An(杨林安),Zhang Yi-Men(张义门),Zhang Yu-Ming(张玉明),Zhang Zhi-Yong(张志勇),Yan Jun-Feng,
来源：中国物理（英文版） 年份：2003
This paper describes the fabrication and characteristics of the lateral Ti/4H-SiC Schottky barrier diodes (SBDs).SBDs are fabricated by nitrogen ion implantatio...
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