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[期刊论文] 作者：WANG Huan,YAO Shu-De,
来源：中国物理快报（英文版） 年份：2014
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,Characterization of tetragonal distortion in a thick Al0.2Ga0.8N epilayer with an AlN interlayer by
[期刊论文] 作者：Wang Huan,Yao Shu-De,
来源：中国物理B（英文版） 年份：2014
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[期刊论文] 作者：ZHOU Sheng-Qiang,WU Ming-Fang,YAO Shu-De,
来源：中国物理快报（英文版） 年份：2005
Alx Ga1-x N/GaN heterostructures are grown on c-sapphire with the Al composition x from 0.2 to 0.4 and thicknesses from 20nm to 30nm. The lattice parameters a a...
[期刊论文] 作者：ZHOU Sheng-Qiang,WU Ming-Fang,YAO Shu-De,
来源：中国物理快报（英文版） 年份：2005
Ga(In, Al)N alloys are used as an active layer or cladding layer in light emitting diodes and laser diodes. x-raydiffraction is extensively used to evaluate the...
,A Comparison of GaN Epilayers with Multiple Buffer Layers and with a Single Buffer Layer Grown on S
[期刊论文] 作者：DING Zhi-Bo,WANG Kun,YAO Shu-De,
来源：中国物理快报（英文版） 年份：2008
Two hexagonal GaN epilayers (samples A and B) with multiple buffer layers and single buffer layer are grown on Si (111) by metal-organic vapour phase epitaxy (M...
[期刊论文] 作者：FA Tao,XIANG Qing-Pei,YAO Shu-De,
来源：中国物理快报（英文版） 年份：2009
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,Study of depth-dependent tetragonal distortion of quaternary AlInGaN epilayer by Rutherford backsca
[期刊论文] 作者：G.Husnain,Chen Tian-Xiang,Fa Tao,Yao Shu-De,
来源：中国物理B（英文版） 年份：2010
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,Comparative Characterization of InGaN/GaN Multiple Quantum Wells by Transmission Electron Microscop
[期刊论文] 作者：ZHOU Sheng-Qiang,WU Ming-Fang,YAO Shu-De,ZHANG Guo-Yi,
来源：中国物理快报（英文版） 年份：2005
The composition, elastic strain and structural defects of InGaN/GaN multiple quantum wells (MQWs) are comparatively investigated by using x-ray diffraction (XRD...
[期刊论文] 作者：HUA Wei,YAO Shu-De,WANG Kun,DING Zhi-Bo,
来源：中国物理快报（英文版） 年份：2008
Composition in amorphous Si,1-xC,x: H heteroepitaxial thin films on Si (100) by plasma enhanced chemical vapour deposition (PECVD) is analysed. The unknown x (0...
,Depth Dependence of Tetragonal Distortion of a ZnO/Mg0.1Zn0.9O/ZnO Heterostructure Studied by Ruthe
[期刊论文] 作者：WANG Kun,DING Zhi-Bo,LI Lin,YAO Shu-De,
来源：中国物理快报（英文版） 年份：
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,Dislocation and Elastic Strain in an InN Film Characterized by Synchrotron Radiation X-Ray Diffract
[期刊论文] 作者：CHENG Feng-Feng,FA Tao,WANG Xin-Qiang,YAO Shu-De,
来源：中国物理快报（英文版） 年份：2012
Dislocation information and strain-related tetragonal distortion as well as crystalline qualities of a 2-μm-thick InN film grown by molecular beam epitaxy (MBE...
[期刊论文] 作者：Fa Tao,Li Lin,Yao Shu-De,Wu Ming-Fang,Zhou Sheng-Qiang,
来源：中国物理B（英文版） 年份：2011
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[期刊论文] 作者：Pan Feng,Guo Ying,Cheng Feng-Feng,Fa Tao,Yao Shu-De,
来源：中国物理B（英文版） 年份：2011
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,Microstructure Study on Heterostructures of AlInGaN/GaN/Al2O3 by Using Rutherford Backscattering/Ch
[期刊论文] 作者：WANG Huan,YAO Shu-De,PAN Yao-Bo,YU Tong-Jun,ZHANG Guo-Yi,
来源：中国物理快报（英文版） 年份：2006
A quateary AlInGaN layer is grown by metal-organic chemical vapour deposition on a sapphire (0001) substrate with a thick (＞ 1 μm) GaN intermediate layer....
[期刊论文] 作者：DING Zhi-Bo,WU Wei,WANG Kun,FA Tao,YAO Shu-De,
来源：中国物理快报（英文版） 年份：2009
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,Tetragonal Distortion of GaN Epilayer with Multiple Buffer Layers on Si(111) Studied by RBS/Channel
[期刊论文] 作者：DING Zhi-Bo,WANG Kun,ZHOU Sheng-Qiang,CHEN Tian-Xiang,YAO Shu-De,
来源：中国物理快报（英文版） 年份：2007
Rutherford backscattering (RBS)/channelling and high resolution x-ray diffraction (HRXRD) have been used to characterize the tetragonal distortion of a GaN epil...
[期刊论文] 作者：ZHOU Sheng-Qiang,WU Ming-Fang,YAO Shu-De,WANG Li,JIANG Feng-Yi,
来源：中国物理快报（英文版） 年份：2006
Epitaxial ZnO films are grown on Al2O3 (0001) by the MOCVD method. These films are high quality wurtzite crystals with (0001) orientation. Big hexagonal crystal...
[期刊论文] 作者：CHEN Tian-Xiang,YAO Shu-De,WANG Kun,WANG Huan,DING Zhi-Bo,CHEN Di,
来源：中国物理快报（英文版） 年份：2009
Structures of polyimide (6051) films modified by irradiation of 2.0 MeV Si ions with different fluences are studied in detail. Variations of the functional grou...
[期刊论文] 作者：DING Bin-Beng,PAN Feng,FENG Zhe-Chuan,FA Tao,CHENG Feng-Feng,YAO Shu-De,
来源：中国物理快报（英文版） 年份：2011
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[期刊论文] 作者：CHEN Tian-Xiang,YAO Shu-De,HUA Wei,FA Tao,LI Lin,ZHOU Sheng-Qiang,
来源：中国物理快报（英文版） 年份：2009
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