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[期刊论文] 作者：YidingLin,KwangHongLee,ShuyuBao,XinGuo,HongWang,JurgenMichel,ChuanSengTan,
来源：PhotonicsResearch 年份：2017
In this paper, normal incidence vertical p-i-n photodetectors on a germanium-on-insulator (GOI) platform were demonstrated. The vertical p-i-n structure was realized by ion-implanting boron and arsenic at the bottom and top of the Ge layer,......
High-efficiency normal-incidence vertical p-i-n photodetectors on a germanium-on-insulator platform:
[期刊论文] 作者：YidingLin,KwangHongLee,ShuyuBao,XinGuo,HongWang,JurgenMichel,ChuanSengTan,
来源：PhotonicsResearch 年份：2018
This publisher’s note reports corrections to Eq. (1) in [Photon. Res.5, 702 (2017)PRHEIZ2327-9125...
PIC-integrable, uniformly tensile-strained Ge-on-insulator photodiodes enabled by recessed SiNx stre
[期刊论文] 作者：YidingLin,DanhaoMa,KwangHongLee,Rui-TaoWen,GovindoSyaranamual,LionelC.Kimerling,ChuanSengTan,JurgenMichel,
来源：PhotonicsResearch 年份：2021
Mechanical strain engineering has been promising for many integrated photonic applications. However, for the engineering of a material electronic bandgap, a trade-off exists between the strain uniformity and the integration compatibility wi......
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