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搜索耗时3.2133秒,为你在为你在102,285,761篇论文里面共找到 9 篇相符的论文内容
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,High-Temperature Performance Analysis of AlGaN/GaN Polarization Doped Field Effect Transistors Base
[期刊论文] 作者:FANG Yu-Long,FENG Zhi-Hong,LI Cheng-Ming,SONG Xu-Bo,YIN Jia-Yun,ZHOU Xing-Ye,WANG Yuan-Gang,
来源:中国物理快报(英文版) 年份:2015
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,Influence of the AlGaN barrier thickness on polarization Coulomb field scattering in an AlGaN/AlN/G
[期刊论文] 作者:Lv Yuan-Jie,Feng Zhi-Hong,Gu Guo-Dong,Yin Jia-Yun,Fang Yu-Long,Wang Yuan-Gang,Tan Xin,
来源:中国物理B(英文版) 年份:2015
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,Comparison of electrical characteristic between AlN/GaN and AlGaN/GaN heterostructure Schottky diod
[期刊论文] 作者:Lü Yuan-Jie,Feng Zhi-Hong,Lin Zhao-Jun,Gu Guo-Dong,Dun Shao-Bo,Yin Jia-Yun,Han Ting-Ting,
来源:中国物理B(英文版) 年份:2014
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,Different influences of Schottky metal on the strain and relative permittivity of barrier layer bet
[期刊论文] 作者:Lü Yuan-Jie,Feng Zhi-Hong,Gu Guo-Dong,Dun Shao-Bo,Yin Jia-Yun,Wang Yuan-Gang,Xu Peng,
来源:中国物理B(英文版) 年份:2014
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,Influence of temperature on strain-induced polarization Coulomb field scattering in AlN/GaN heteros
[期刊论文] 作者:Lü Yuan-Jie,Feng Zhi-Hong,Lin Zhao-Jun,Guo Hong-Yu,Gu Guo-Dong,Yin Jia-Yun,Wang Yuan-Gang,
来源:中国物理B(英文版) 年份:2014
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[期刊论文] 作者:Liu Bo,Zhang Sen,Yin Jia-Yun,Zhang Xiong-Wen,Dun Shao-Bo,Feng Zhi-Hong,Cai Shu-Jun,
来源:中国物理B(英文版) 年份:2013
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,Influence of drain bias on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect tran
[期刊论文] 作者:Lü Yuan-Jie,Feng Zhi-Hong,Cai Shu-Jun,Dun Shao-Bo,Liu Bo,Yin Jia-Yun,Zhang Xiong-Wen,
来源:中国物理B(英文版) 年份:2013
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,Directly extracting both threshold voltage and series resistance from the conductance-voltage curve
[期刊论文] 作者:Lü Yuan-Jie,Feng Zhi-Hong,Gu Guo-Dong,Dun Shao-Bo,Yin Jia-Yun,Han Ting-Ting,Sheng Bai-Cheng,
来源:中国物理B(英文版) 年份:2013
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[期刊论文] 作者:Sheng-Hou,CAI Yong,GONG Ru-Min,WANG Jin-Yan,ZENG Chun-Hong,SHI Wen-Hua,FENG Zhi-Hong,WANG Jing-Jing,YIN Jia-Yun,
来源:中国物理快报(英文版) 年份:2011
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