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A study of residual stress distribution and interfacial micro-crack development in TBCs with Cohesiv
[会议论文] 作者：Kai Lv,Ying-qiang Xu,Jian Sun,Shu-wei Zhao,Fei-fei Wang,
来源：第十一届全国表面工程大会暨第八届全国青年表面工程学术会议 年份：2016
Thermal barrier coatings(TBCs) are applied to superalloy turbine blades to provide thermal insulation and oxidation protection. And the performance of these multi-layered and multi-material systems ,t...
[期刊论文] 作者：Xuan Zhang,Qing-Xuan Jia,Ju Sun,Dong-Wei Jiang,Guo-Wei Wang,Ying-Qiang Xu,Zhi-Chuan Niu,
来源：中国物理B（英文版） 年份：2020
we report nBn photodetectors based on InAs0.91Sb0.09 with a 100％cut-off wavelength of 4.75 μm at 300 K. The bandof an nBn detector is similar to that of a stand...
[期刊论文] 作者：Yang Ren,Rui-Ting Hao,Si-Jia Liu,Jie Guo,Guo-Wei Wang,Ying-Qiang Xu,Zhi-Chuan Niu,
来源：中国物理快报（英文版） 年份：2016
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,Very long wavelength infrared focal plane arrays with 50％ cutoff wavelength based on type-Ⅱ InAs/Ga
[期刊论文] 作者：Xi Han,Wei Xiang,Hong-Yue Hao,Dong-Wei Jiang,Yao-Yao Sun,Guo-Wei Wang,Ying-Qiang Xu,
来源：中国物理B（英文版） 年份：2017
...
,2-μm single longitudinal mode GaSb-based laterally coupled distributed feedback laser with regrowth
[期刊论文] 作者：Cheng-Ao Yang,Yu Zhang,Yong-Ping Liao,Jun-Liang Xing,Si-Hang Wei,Li-Chun Zhang,Ying-Qiang Xu,
来源：中国物理B（英文版） 年份：2016
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,High-Power Single-Spatial-Mode GaSb Tapered Laser around 2.0 μm with Very Small Lateral Beam Diverg
[期刊论文] 作者：Shu-Shan Huang,Yu Zhang,Yong-Ping Liao,Cheng-Ao Yang,Xiao-Li Chai,Ying-Qiang Xu,Hai-Qiao Ni,Zhi-Chuan,
来源：中国物理快报（英文版） 年份：2017
We report high-power single-spatial-mode type-Ⅰ GaSb-based tapered lasers fabricated on the InGaSb/AlGaAsSb material system.A straight ridge and three differen...
[期刊论文] 作者：Zhi Jiang,Yao-Yao Sun,Chun-Yan Guo,Yue-Xi Lv,Hong-Yue Hao,Dong-Wei Jiang,Guo-Wei Wang,Ying-Qiang Xu,Zhi-Chuan,
来源：中国物理B（英文版） 年份：2019
A long-/long-wave dual-color detector with N-M-π-B-π-M-N structure was developed based on a type-Ⅱ InAs/GaSb superlattice.The saturated responsivity was achi...
GaSb-based type-I quantum well cascade diode lasers emitting at nearly 2-μtm wavelength with digital
[期刊论文] 作者：Yi Zhang,Cheng-Ao Yang,Jin-Ming Shang,Yi-Hang Chen,Tian-Fang Wang,Yu Zhang,Ying-Qiang Xu,Bing Liu,Zhi-Chuan,
来源：中国物理B（英文版） 年份：2021
We report a GaSb-based type-Ⅰ quantum well cascade diode laser emitting at nearly 2-μm wavelength.The recycling of carriers is realized by the gradient A1GaAsSb barrier and chirped GaSb/A1Sb/InAs electron injector.The growth of quaternary......
,Performance of dual-band short-or mid-wavelength infrared photodetectors based on InGaAsSb bulk mat
[期刊论文] 作者：Yao-yao Sun,Yue-xi Lv,Xi Han,Chun-yan Guo,Zhi Jiang,Hong-yue Hao,Dong-wei Jiang,Guo-wei Wang,Ying-qiang Xu,
来源：中国物理B（英文版） 年份：2017
In this paper,we demonstrate bias-selectable dual-band short-or mid-wavelength infrared photodetectors based on In0.24Ga0.76As0.21 Sb0.79 bulk materials and InA...
[期刊论文] 作者：Sheng-Wen Xie,Yu Zhang,Cheng-Ao Yang,Shu-Shan Huang,Ye Yuan,Yi Zhang,Jin-Ming Shang,Fu-Hui Shao,Ying-Qiang Xu,
来源：中国物理B（英文版） 年份：2019
InGaSb/AlGaAsSb double-quantum-well diode lasers emitting around 2 μm are demonstrated. The AlGaAsSb bar-riers of the lasers are grown with digital alloy techn...
[期刊论文] 作者：Su-Ning Cui,Dong-Wei Jiang,Ju Sun,Qing-Xuan Jia,Nong Li,Xuan Zhang,Yong Li,Fa-Ran Chang,Guo-Wei Wang,Ying-Qiang Xu,
来源：中国物理B（英文版） 年份：2020
The eight-band k · p model is used to establish the energy band structure model of the type-II InAs/GaSb superlattice detectors with a cut-off wavelength of 10...
[期刊论文] 作者：Yi Zhang,Fu-Hui Shao,Cheng-Ao Yang,Sheng-Wen Xie,Shu-Shan Huang,Ye Yuan,Jin-Ming Shang,Yu Zhang,Ying-Qiang Xu,
来源：中国物理B（英文版） 年份：2018
We report a type-II GaSb-based interband cascade laser operating a continuous wave at room temperature. The cas-cade region of interband cascade laser was desig...
[期刊论文] 作者：Shao,Yi Zhang,Xiang-Bin Su,Sheng-Wen Xie,Jin-Ming Shang,Yun-Hao Zhao,Chen-Yuan Cai,Ren-Chao Che,Ying-Qiang Xu,
来源：中国物理B（英文版） 年份：2018
We compare the effect of InGaAs/GaAs strained-layer superlattice (SLS) with that of GaAs thick buffer layer (TBL) serving as a dislocation filter layer. The InG...
Growth of high quality InSb thin films on GaAs substrates by molecular beam epitaxy method with AlIn
[期刊论文] 作者：,Xiao-Ming Li,Rui-Ting Hao,Jie Guo,Yu Zhuang,Su-Ning Cui,Guo-Shuai Wei,Xiao-Le Ma,Guo-Wei Wang,Ying-Qiang Xu,
来源：中国物理B（英文版） 年份：2021
A series of InSb thin films were grown on GaAs substrates by molecular beam epitaxy(MBE).GaSb/AlInSb is used as a compound buffer layer to release the strain ca...
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