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Operation Voltage Controllability in Resistive Switching Memory using Metal-Insulator-Metal Structur
[会议论文] 作者：In-Sung Park,Yong Chan Jung,Hyunjun Park,Ju-Bin Seo,Jinho Ahn,
来源：2011年第三届微电子及等离子体技术国际会议 年份：2011
The resistive switching devices using the metal oxide insulator have been extensively studied for the potential applications such as non-volatile memory....
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