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Hardware-in-the-Loop Research on the Electronic Control Unit for Diesel Engines
[期刊论文] 作者：WANG Yu-ming,ZHANG Fu-jun,WANG, 来源：北京理工大学学报（英文版） 年份：2009
本文通过对荣华二采区10...
,Study of a 4H-SiC epitaxial n-channel MOSFET
[期刊论文] 作者：Tang Xiao-Yan,Zhang Yu-Ming,Zhang Yi-Men, 来源：中国物理B（英文版） 年份：2010
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,First-principle calculation on the defect energy level of carbon vacancy in 4H-SiC
[期刊论文] 作者：Jia Ren-Xu,Zhang Yu-Ming,Zhang Yi-Men, 来源：中国物理B（英文版） 年份：2010
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CONGENITAL NEPHROGENIC DIABETES INSIPIDUS: REPORT OF A CASE
[期刊论文] 作者：Zhang Yu-ming,Zhang Xin-xin,Li Xiu-lan, 来源：中华医学杂志英文版 年份：1985
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,Relationship of annealing time and intrinsic defects of unintentionally doped 4H-SiC
[期刊论文] 作者：Cheng Ping,Zhang Yu-Ming,Zhang Yi-Men,Guo Hui, 来源：中国物理B（英文版） 年份：2010
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,Atomic-layer-deposited Al2O3 and HfO2 on InAlAs: A comparative study of interfacial and electrical
[期刊论文] 作者：Li-Fan Wu,Yu-Ming Zhang,Hong-Liang Lv,Yi-Men Zhang, 来源：中国物理B（英文版） 年份：2016
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,Interfacial characteristics of Al/Al2O3/ZnO/n-GaAs MOS capacitor
[期刊论文] 作者：Liu Chen,Zhang Yu-Ming,Zhang Yi-Men,Lü Hong-Liang, 来源：中国物理B（英文版） 年份：2013
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,Effects of Fe-Oxide and Mg Layer Insertion on Tunneling Magnetoresistance Properties of CoFeB/MgO/C
[期刊论文] 作者：Yong-Le Lou,Yu-Ming Zhang,Hui Guo,Da-Qing Xu,Yi-Men Zhang, 来源：中国物理快报（英文版） 年份：2016
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,Simulation research on offset field-plate used as edge termination in 4H-SiC merged PiN-Schottky di
[期刊论文] 作者：Chen Feng-Ping,Zhang Yu-Ming,Zhang Yi-Men,Lu Hong-Liang,Song Qing-Wen, 来源：中国物理B（英文版） 年份：2010
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,Investigation of dislocations in 8°off-axis 4H-SiC epilayer
[期刊论文] 作者：Miao Rui-Xia,Zhang Yu-Ming,Zhang Yi-Men,Tang Xiao-Yan,Gai Qing-Feng, 来源：中国物理B（英文版） 年份：2010
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,Investigation of current transport parameters of Ti/4H-SiC MPS diode with inhomogeneous barrier
[期刊论文] 作者：Song Qing-Wen,Zhang Yu-Ming,Zhang Yi-Men,Chen Feng-Ping,Tang xiao-Yan, 来源：中国物理B（英文版） 年份：2011
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,Study of a double epi-layers SiC junction barrier Schottky rectifiers embedded P layer in the drift
[期刊论文] 作者：Song Qing-Wen,Zhang Yu-Ming,Zhang Yi-Men,Zhang Qian,Lü Hong-Liang, 来源：中国物理B（英文版） 年份：2010
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,Methods for Thickness Determination of SiC Homoepilayers by Using Infrared Reflectance Spectroscopy
[期刊论文] 作者：LI Zhi-Yu,SUN Ji-Wei,ZHANG Yu-Ming,ZHANG Yi-Men,TANG Xiao-Yan, 来源：中国物理快报（英文版） 年份：2010
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,Effect of Carbonized Conditions on Residual Strain and Crystallinity Quality of Heteroepitaxial Gro
[期刊论文] 作者：CHEN Da,ZHANG Yu-Ming,ZHANG Yi-Men,WANG Yue-Hu,TANG Xiao-Yan, 来源：中国物理快报（英文版） 年份：2009
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,Temperature-Dependent Effect of Near-Interface Traps on SiC MOS Capacitance
[期刊论文] 作者：Yan-Jing He,Xiao-Yan Tang,Yi-Fan Jia,Ci-Qi Zhou,Yu-Ming Zhang, 来源：中国物理快报（英文版） 年份：2018
A two-dimensional electrical SiC MOS interface model including interface and near-interface traps is established based on the relevant tunneling and interface S...
,Simulation of SiC radiation detector degradation
[期刊论文] 作者：Hai-Li Huang,Xiao-Yan Tang,Hui Guo,Yi-Men Zhang,Yu-Tian Wang,Yu-Ming Zhang, 来源：中国物理B（英文版） 年份：2019
Simulation on the degradation of 4H-SiC Schottky detector was carried out using ISE TCAD, and the limit of the drift-diffusion analytical model was discussed. T...
,Analytical model for reverse characteristics of 4H-SiC merged PN-Schottky (MPS) diodes
[期刊论文] 作者：Song Qing-Wen,Zhang Yu-Ming,Zhang Yi-Men,Lu Hong-Liang,Chen Feng-Ping,Zheng Qing-Li, 来源：中国物理B（英文版） 年份：2009
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,Edge termination study and fabrication of a 4H-SiC junction barrier Schottky diode
[期刊论文] 作者：Chen Feng-Ping,Zhang Yu-Ming,Zhang Yi-Men,Tang Xiao-Yan,Wang Yue-Hu,Chen Wen-Hao, 来源：中国物理B（英文版） 年份：2011
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,SiC epitaxial layers grown by chemical vapour deposition and the fabrication of Schottky barrier di
[期刊论文] 作者：Wang Yue-Hu,Zhang Yi-Men,Zhang Yu-Ming,Zhang Lin,Jia Ren-Xu,Chen Da, 来源：中国物理B（英文版） 年份：2010
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,Efficient thermal analysis method for large scale compound semiconductor integrated circuits based
[期刊论文] 作者：Shi-Zheng Yang,Hong-Liang Lv,Yu-Ming Zhang,Yi-Men Zhang,Bin Lu,Si-Lu Yan, 来源：中国物理B（英文版） 年份：2018
In this paper, an efficient thermal analysis method is presented for large scale compound semiconductor integrated circuits based on a heterojunction bipolar tr...
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