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[期刊论文] 作者：LU Min(陆敏),CHANG Xin(常昕),LI Zi-Lan(黎子兰),YANG Zhi-Jian(杨志坚),ZHANG Guo-Yi(张国义),ZHANG Bei(章蓓),
来源：中国物理快报（英文版） 年份：2003
High quality epitaxial GaN films on (0001) sapphire substrates were grown by a commercial metal-organic chemical vapour deposition system. The, etch pits and th...
[期刊论文] 作者：,LI Zi-Lan(黎子兰),YANG Zhi-Jian(杨志坚),LI Zhong-Hui(李忠辉),REN Qian(任谦),JIN Chun-Lai(金春来),LU Shu(陆曙),ZHANG Bei(章蓓,
来源：中国物理快报（英文版） 年份：2003
The effects of dopants on the defects of GaN films were investigated by using different methods, such as wet,etching of pits, x-ray diffraction and photolumines...
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