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[期刊论文] 作者：ZHANG Jin-feng,
来源：苏州市职业大学学报 年份：2004
为了提高学生对PLC的应用能力,利用欧姆龙新型的CP1H可编程序控制器的丰富功能,开发相应的实验实训平台,形成从简单到复杂,从单机到网络的完整实训系统....
[期刊论文] 作者：ZHANG Jin-feng,
来源：海外英语 年份：2011
...
[期刊论文] 作者：ZHANG Jin-feng,ZHANG Qing-he,
来源：水动力学研究与进展B辑 年份：2004
The settling and hydrodynamic properties of 3-D fractal flocs in quiescent water are investigated with a numerical model based on the Lattice Boltzmann Method (...
[期刊论文] 作者：Zhang Jin-Feng,Hao Yue,
来源：中国物理（英文版） 年份：2006
In the GaN-based heterostructures, this paper reports that the strong electric fields induced by polarization effects at the structure boundaries complicate the...
[期刊论文] 作者：ZHANG Jin-feng,YUAN Shou-qi,FU,
来源：水动力学研究与进展B辑 年份：2004
Numerical simulation of 3-D inner flow between Up-stream Pumping Mechanical Face Seals (UPMFS) faces was initially done by CFD software, which made the flow vis...
Experimental Investigation of Local Scour Around A New Pile-Group Foundation for Offshore Wind Turbi
[期刊论文] 作者：JI Chao,ZHANG Jin-feng,ZHANG Q,
来源：中国海洋工程:英文版 年份：2018
The local scour around a new pile-group foundation of offshore wind turbine subjected to a bi-directional current was physically modeled with a bi-directional f...
Experimental Investigation of Local Scour Around A New Pile-Group Foundation for Offshore Wind Turbi
[期刊论文] 作者：JI Chao,ZHANG Jin-feng,ZHANG Q,
来源：黑龙江科技学院学报 年份：2018
为探究吕家坨井田地质构造格局,根据钻孔勘探资料,采用分形理论和趋势面分析方法,研究了井田7...
[期刊论文] 作者：Zhang Jin-Feng,Zhang Jin-Cheng,Hao Yue,
来源：中国物理（英文版） 年份：2004
The theoretic calculation and analysis of the temperature dependence of Hall electron density of a sample AlGaN/GaN heterostructure has been carried out in the...
[期刊论文] 作者：ZHANG Jin-feng,Li Hui,Dong Jia,
来源：城市道桥与防洪 年份：2005
该文从挂篮荷载计算、施工流程、支座及临时固结施工、挂篮安装及试验、合拢段施工、模板制作安装、钢筋安装、混凝土的浇筑及养生、测量监控等方面人手,介绍了S226海滨大桥...
[期刊论文] 作者：Chang Zhang,Jin-Feng Liu,Jian Hao,
来源：微环境与微生态学研究 年份：2021
Pre-metastatic niches(PMNs)are the microenvi-ronments prepared by the interaction of tumor cells and the surrounding microenvironment for the colonization of circulating tumor cells at distant metastatic sites and before metastasis and spre......
[期刊论文] 作者：Guang-wei Liu,Qing-he Zhang,Jin-feng Zhang,
来源：水动力学研究与进展B辑 年份：2020
A 2-D numerical wave tank (NWT) is developed using the lattice Boltzmann method (LBM) and a multi-relaxation-time (MRT) collision model coupled with an algebraic volume of fluid (VOF) scheme for free surface tracking. An external force base......
,Effects of donor density and temperatureon electron systems in AlGaN/AlN/GaN and AlGaN/GaN structur
[期刊论文] 作者：Zhang Jin-Feng,Wang Chong,Zhang Jin-Cheng,Hao Yue,
来源：中国物理（英文版） 年份：2006
It was reported by Shen et al that the two-dimensional electron gas (2DEG) in an AlGaN/AlN/GaN structure showed high density and improved mobility compared with...
[期刊论文] 作者：Zhang Jin-Feng,Mao Wei,Zhang Jin-Cheng,Hao Yue,
来源：中国物理B（英文版） 年份：2008
To reveal the inteal physics of the low-temperature mobility of two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructures, we present a theoretical stud...
,Optical and structural investigation of a-plane GaN layers on r-plane sapphire with nucleation laye
[期刊论文] 作者：Zhang Jin-Feng,Xu Sheng-Rui,Zhang Jin-Cheng,Hao Yue,
来源：中国物理B（英文版） 年份：2011
...
,Robust Performance of AlGaN-Channel Metal-Insulator-Semiconductor High-Electron-Mobility Transistor
[期刊论文] 作者：Li Zhang,Jin-Feng Zhang,Wei-Hang Zhang,Tao Zhang,Lei Xu,Jin-Cheng Zhang,Yue Hao,
来源：中国物理快报（英文版） 年份：2017
Superior characteristics of AlGaN-channel metal-insulator-semiconductor (MIS) high electron mobility transistors (HEMTs) at high temperatures are demonstrated i...
[期刊论文] 作者：Zhang Jin-Feng,Nie Yu-Hu,Zhou Yong-Bo,Tian Kun,Ha Wei,Xiao Ming,Zhang Jin-Cheng,
来源：中国物理B（英文版） 年份：2014
...
,A two-dimensional fully analytical model with polarization effect for off-state channel potential a
[期刊论文] 作者：Mao Wei,She Wei-Bo,Yang Cui,Zhang Chao,Zhang Jin-Cheng,Ma Xiao-Hua,Zhang Jin-Feng,
来源：中国物理B（英文版） 年份：2014
...
[期刊论文] 作者：Chen Hai-Feng,Hao Yue,Ma Xiao-Hua,Zhang Jin-Cheng,Li Kang,Cao Yan-Rong,Zhang Jin-Feng,Zhou Peng-Ju,
来源：中国物理（英文版） 年份：2006
A specially designed experiment is performed for investigating gate-induced drain leakage (GIDL) current in 90nm CMOS technology using lightly-doped drain (LDD)...
,Structural and optical investigation of nonpolar a-plane GaN grown by metal-organic chemical vapour
[期刊论文] 作者：Xu Sheng-Rui,Zhang Jin-Feng,Gu Wen-Ping,Hao Yue,Zhang Jin-Cheng,Zhou Xiao-Wei,Lin Zhi-Yu,Mao Wei,
来源：中国物理B（英文版） 年份：2012
...
[期刊论文] 作者：Ma Xiao-Hua,Hao Yue,Sun Bao-Gang,Gao Hai-Xia,Ren Hong-Xia,Zhang Jin-Cheng,Zhang Jin-Feng,Zhang Xiao-Ju,
来源：中国物理（英文版） 年份：2006
N and P-channel groove-gate MOSFETs based on a self-aligned CMOS process have been fabricated and characterized. For the devices with channel length of 140nm, t...
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