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[期刊论文] 作者：ZHANGFujia,QILi,等,
来源：半导体光子学与技术：英文版 年份：1997
The Raman scattering spectra of n-type GaP(doped S) single crystal and red and green luminous materials grown on the n-type GaP(doped S)single crystal substrate...
Preparation of Organic Semiconductor PTCDA and Studies on Its Crystal Structure and the Absorption S
[期刊论文] 作者：ZHANGFujia,LIUFengmin,等,
来源：半导体光子学与技术：英文版 年份：1997
Organic semiconductoe3,4,9,10-perylenetetracarboxylic dianhydride(PTCDA)has been synthetized with 1,8-naphthalic anhydride using chemical method.X-ray diffracti...
[期刊论文] 作者：GANRunjin,ZHANGFujia,等,
来源：半导体光子学与技术：英文版 年份：1998
The samples of (AlP)n/(GaP)n short-period superlattics(period number n=4,6)grown by MOVPE and the sample of n-GaP(100)single crystal substrate are measured and...
SEM and Positron Annihilation Technology Investigation on the Defect Change with Thermal Treatment T
[期刊论文] 作者：ZHANGFujia,QILi,等,
来源：半导体光子学与技术：英文版 年份：1997
Defects in S doped Gap Single crystal which is prepared by LEC method were observed using SEM and positron lifetime,and its change with thermal treatment temper...
[期刊论文] 作者：冯煜东，张福甲，FengYudong，ZhangFujia,
来源：真空科学与技术学报 年份：2006
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