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Influence of annealing on the structural, optical and electrical properties of indium oxide films de
[期刊论文] 作者：ZHAOHong-duo,MIWei,ZHANGKai-liang,ZHAOJin-shi,
来源：OptoelectronicsLetters 年份：2016
Indium oxide (In2O3) films were prepared on Al2O3(0001) substrates at 700 °C by metal-organic chemical vapor deposition (MOCVD). Then the samples were annealed at 800 °C, 900 °C and 1 000 °C, respectively. The X...
[期刊论文] 作者：ZHANGKai-liang,WUChang-qiang,WANGFang,MIAOYin-ping,LIUKai,ZHAOJin-shi,
来源：OptoelectronicsLetters 年份：2013
Flexible TiO2 memory devices are fabricated on a plastic substrate at room temperature. The metal-insulator-metal (MIM) structure is grown on polyimide (PI). Several metals with different ductilities, such as Al, W, Cu and Ag, are selected ......
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