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[期刊论文] 作者：Ding Bin-Feng,Zhou Sheng-Qiang,
来源：中国物理B（英文版） 年份：2011
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[期刊论文] 作者：ZHOU Sheng-Qiang,WU Ming-Fang,YAO Shu-De,
来源：中国物理快报（英文版） 年份：2005
Alx Ga1-x N/GaN heterostructures are grown on c-sapphire with the Al composition x from 0.2 to 0.4 and thicknesses from 20nm to 30nm. The lattice parameters a a...
[期刊论文] 作者：ZHOU Sheng-Qiang,WU Ming-Fang,YAO Shu-De,
来源：中国物理快报（英文版） 年份：2005
Ga(In, Al)N alloys are used as an active layer or cladding layer in light emitting diodes and laser diodes. x-raydiffraction is extensively used to evaluate the...
,Comparative Characterization of InGaN/GaN Multiple Quantum Wells by Transmission Electron Microscop
[期刊论文] 作者：ZHOU Sheng-Qiang,WU Ming-Fang,YAO Shu-De,ZHANG Guo-Yi,
来源：中国物理快报（英文版） 年份：2005
The composition, elastic strain and structural defects of InGaN/GaN multiple quantum wells (MQWs) are comparatively investigated by using x-ray diffraction (XRD...
[期刊论文] 作者：Fa Tao,Li Lin,Yao Shu-De,Wu Ming-Fang,Zhou Sheng-Qiang,
来源：中国物理B（英文版） 年份：2011
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,Tetragonal Distortion of GaN Epilayer with Multiple Buffer Layers on Si(111) Studied by RBS/Channel
[期刊论文] 作者：DING Zhi-Bo,WANG Kun,ZHOU Sheng-Qiang,CHEN Tian-Xiang,YAO Shu-De,
来源：中国物理快报（英文版） 年份：2007
Rutherford backscattering (RBS)/channelling and high resolution x-ray diffraction (HRXRD) have been used to characterize the tetragonal distortion of a GaN epil...
[期刊论文] 作者：ZHOU Sheng-Qiang,WU Ming-Fang,YAO Shu-De,WANG Li,JIANG Feng-Yi,
来源：中国物理快报（英文版） 年份：2006
Epitaxial ZnO films are grown on Al2O3 (0001) by the MOCVD method. These films are high quality wurtzite crystals with (0001) orientation. Big hexagonal crystal...
[期刊论文] 作者：CHEN Tian-Xiang,YAO Shu-De,HUA Wei,FA Tao,LI Lin,ZHOU Sheng-Qiang,
来源：中国物理快报（英文版） 年份：2009
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[期刊论文] 作者：YAO Shu-De,ZHOU Sheng-Qiang,YANG Zi-Jian,LU Yi-Hong,SUN Chang-Chun,SUN Chang,ZHANG Guo-Yi,VANTOMME Andre,
来源：中国物理快报（英文版） 年份：2003
Mg+ and Mg++P+ were introduced into GaN by ion implantation. The structure and crystalline quality of the GaN samples were analysed by Rutherford backscattering...
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