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[期刊论文] 作者：Zahra Ahangari,Morteza Fathipour,,
来源：Chinese Physics B 年份：2013
This paper explores the band structure effect to elucidate the feasibility of an ultra-scaled GaAs Schottky MOSFET (SBFET) in a nanoscale regime. We have employ...
Improved double-gate armchair silicene nanoribbon field-effect-transistor at large transport bandgap
[期刊论文] 作者：Mohsen Mahmoudi,Zahra Ahangari,Morteza Fathipour,,
来源：Chinese Physics B 年份：2016
The electrical characteristics of a double-gate armchair silicene nanoribbon field-effect-transistor(DG ASi NR FET)are thoroughly investigated by using a ballis...
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