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[期刊论文] 作者：Zhang Jin-Feng,Zhang Jin-Cheng,Hao Yue,
来源：中国物理（英文版） 年份：2004
The theoretic calculation and analysis of the temperature dependence of Hall electron density of a sample AlGaN/GaN heterostructure has been carried out in the...
,Effects of donor density and temperatureon electron systems in AlGaN/AlN/GaN and AlGaN/GaN structur
[期刊论文] 作者：Zhang Jin-Feng,Wang Chong,Zhang Jin-Cheng,Hao Yue,
来源：中国物理（英文版） 年份：2006
It was reported by Shen et al that the two-dimensional electron gas (2DEG) in an AlGaN/AlN/GaN structure showed high density and improved mobility compared with...
[期刊论文] 作者：Zhang Jin-Feng,Mao Wei,Zhang Jin-Cheng,Hao Yue,
来源：中国物理B（英文版） 年份：2008
To reveal the inteal physics of the low-temperature mobility of two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructures, we present a theoretical stud...
,Optical and structural investigation of a-plane GaN layers on r-plane sapphire with nucleation laye
[期刊论文] 作者：Zhang Jin-Feng,Xu Sheng-Rui,Zhang Jin-Cheng,Hao Yue,
来源：中国物理B（英文版） 年份：2011
...
,Comparative study of different properties of GaN films grown on(0001)sapphire using high and low te
[期刊论文] 作者：Xue Jun-Shuai,Hao Yue,Zhang Jin-Cheng,Ni Jin-Yu,
来源：中国物理B（英文版） 年份：2010
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,Influence of dislocations in the GaN layer on the electrical properties of an AlGaN/GaN heterostruc
[期刊论文] 作者：Gao Zhi-Yuan,Hao Yue,Zhang Jin-Cheng,Li Pei-Xian,Gu Wen-Ping,
来源：中国物理B（英文版） 年份：2009
...
[期刊论文] 作者：Li Zhi-Ming,Hao Yue,Zhang Jin-Cheng,Xu Sheng-Rui,Ni JinYu,
来源：中国物理B（英文版） 年份：2009
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,Degradation mechanism of two-dimensional electron gas density in high Al-content A1GaN/GaN heterost
[期刊论文] 作者：Zhang Jin-Cheng,Zheng Peng-Tian,Zhang Juan,Xu Zhi-Hao,Hao Yue,
来源：中国物理B（英文版） 年份：2009
This paper finds that the two-dimensional electron gas density in high Al-content AlGaN/GaN heterostructures exhibits an obvious time-dependent degradation afte...
,Point defect determination by photoluminescence and capacitance-voltage characterization in a GaN t
[期刊论文] 作者：Li Liang,Yang Lin-An,Zhou Xiao-Wei,Zhang Jin-Cheng,Hao Yue,
来源：中国物理B（英文版） 年份：2013
...
,Growth of a-Plane GaN Films on r-Plane Sapphire by Combining Metal Organic Vapor Phase Epitaxy with
[期刊论文] 作者：JIANG Teng,XU Sheng-Rui,ZHANG Jin-Cheng,LIN Zhi-Yu,JIANG Ren-Yuan,HAO Yue,
来源：中国物理快报（英文版） 年份：2015
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[期刊论文] 作者：Yue Yuan-Zheng,Hao Yue,Zhang Jin-Cheng,Feng Qian,Ni Jin-Yu,Ma Xiao-Hua,
来源：中国物理B（英文版） 年份：2008
This paper studies systematically the drain current collapse in AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) by applying p...
[期刊论文] 作者：Xu Zhi-Hao,Zhang Jin-Cheng,Zhang Zhong-Fen,Zhu Qing-Wei,Duan Huan-Tao,Hao Yue,
来源：中国物理B（英文版） 年份：2009
...
,Degraded model of radiation-induced acceptor defects for GaN-based high electron mobility transisto
[期刊论文] 作者：Fan Long,Hao Yue,Zhao Yuan-Fu,Zhang Jin-Cheng,Gao Zhi-Yuan,Li Pei-xian,
来源：中国物理B（英文版） 年份：2009
Using depletion approximation theory and introducing acceptor defects which can characterize radiation induced deep-level defects in AlGaN/GaN heterostructures,...
[期刊论文] 作者：Zhao Yi,Zhang Jin-Cheng,Xue Jun-Shuai,Zhou Xiao-Wei,Xu Sheng-Rui,Hao Yue,
来源：中国物理B（英文版） 年份：2015
...
[期刊论文] 作者：Cao Meng-Yi,Zhang Kai,Chen Yong-He,Zhang Jin-Cheng,Ma Xiao-Hua,Hao Yue,
来源：中国物理B（英文版） 年份：2014
...
[期刊论文] 作者：Feng Qian,Li Qian,Xing Tao,Wang Qiang,Zhang Jin-Cheng,Hao Yue,
来源：中国物理B（英文版） 年份：2012
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[期刊论文] 作者：Chen Wei-Wei,Ma Xiao-Hua,Hou Bin,Zhu Jie-Jie,Zhang Jin-Cheng,Hao Yue,
来源：中国物理B（英文版） 年份：2013
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[期刊论文] 作者：Wang Chong,He Yun-Long,Zheng Xue-Feng,Ma Xiao-Hua,Zhang Jin-Cheng,Hao Yue,
来源：中国物理B（英文版） 年份：2013
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[期刊论文] 作者：YUE Yuan-Zheng,HAO Yue,FENG Qian,ZHANG Jin-Cheng,MA Xiao-Hua,NI Jin-Yu,
来源：中国物理快报(英文版) 年份：2007
We report a GaN metal-oxide-semiconductor high electron mobility transistor (MOS-HEMT) with atomic layer deposited (ALD) Al2O3 gate dielectric. Based on the pre...
[期刊论文] 作者：LI Zhi-Ming,JIANG Hai-Ying,HAN Yan-Bin,LI Jin-Ping,YIN Jian-Qin,ZHANG Jin-Cheng,
来源：中国物理快报（英文版） 年份：2012
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