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[会议论文] 作者：ZHANG Yu-ming,张玉明,SUN Xu-de,孙绪德,
来源：全国第三次麻醉药理学术会议 年份：2012
目的：应用非控制性失血性休克动物模型,探讨早期限制性液体复苏方案的救治效果.方法：32只新西兰大白兔随机分成4组,建立脾大部损伤的非控制性失血性休克模型.实验分组为：假手术组(SHAM组),休克不治疗组(SWT组),限制性液体复苏组(LT组),积极性液体复苏组(PT组).在实......
[期刊论文] 作者：Wang Shou-Guo(王守国),Zhang Yi-Men(张义门),Zhang Yu-Ming(张玉明),
来源：中国物理（英文版） 年份：2003
Based on the MIS model, a simple method to extract parameters of SiC Schottky diodes is presented using the I-V characteristics. The interface oxide capacitance...
Theoretical investigation of incomplete ionization of dopants in uniform and ion-implanted 4H-SiC ME
[期刊论文] 作者：Wang Shou-Guo(王守国),Zhang Yi-Men(张义门),Zhang Yu-Ming(张玉明),
来源：中国物理（英文版） 年份：2003
The effects of incomplete ionization ofnitrogen in 4H-SiC have been investigated. Poisson’s equation is numerically analysed by considering the effects of Pool...
[期刊论文] 作者：Lu Hong-Liang(吕红亮),Zhang Yi-Men(张义门),Zhang Yu-Ming(张玉明),
来源：中国物理（英文版） 年份：2003
A numerical model for 4H-SiC MESFET anisotropy is presented in this paper and the device performances, such as breakdown, temperature and transient characterist...
[期刊论文] 作者：Yang Lin-An(杨林安),Yu Chun-Li(于春利),Zhang Yi-Men(张义门),Zhang Yu-Ming(张玉明),
来源：中国物理（英文版） 年份：2003
The process-related surface state effect is investigated the fabrication of SiC devices, and a nonlinear model for 4H-SiC power metal-semiconductor field effect...
[期刊论文] 作者：Wang Shou-Guo(王守国),Yang Lin-An(杨林安),Zhang Yi-Men(张义门),Zhang Yu-Ming(张玉明),Zhang Zhi-Yong(张志勇),Yan Jun-Feng,
来源：中国物理（英文版） 年份：2003
This paper describes the fabrication and characteristics of the lateral Ti/4H-SiC Schottky barrier diodes (SBDs).SBDs are fabricated by nitrogen ion implantatio...
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