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[会议论文] 作者：Zhao Cheng-li,He Ping-ni,Sun Wei-zhong,Liu Hua-min,
来源：第十四届全国核物理大会暨第十届会员代表大会 年份：2010
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[会议论文] 作者：Chen Feng,Zhao Cheng-li,Sun Wei-zhong,He Ping-ni,
来源：第十四届全国核物理大会暨第十届会员代表大会 年份：2010
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[会议论文] 作者：Zhao Cheng-li,Sun Wei-zhong,He Ping-ni,Liu Hua-min,
来源：第十四届全国核物理大会暨第十届会员代表大会 年份：2010
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[会议论文] 作者：SUN Wei-zhong,ZHAO Cheng-li,ZHANG Jun-yuan,LU Xiao-dan,F.Gou,
来源：第十五届全国等离子体科学技术会议 年份：2011
Molecular dynamics simulations were performed to study interactions between atomic hydrogen and silicon carbon.In present study,we focus on the effect of the surface temperature on H interacting with...
[会议论文] 作者：Tian Shu-ping,Sun Wei-zhong,Zhang yan-po,Zhao Cheng-li,Chen Feng,F.Gou,
来源：第十五届全国等离子体科学技术会议 年份：2011
During fabricating hydrogenated silicon films using plasma enhanced chemical vapor deposition method (PECVD),the interactions between SiH3+ ions and surfaces signifincantly affect performances of the...
[会议论文] 作者：Zhao Cheng-li,Sun Wei-zhong,Zhang Jun-yuan,Chen Feng,He Ping-ni,Lu Xiao-dan,F.Gou,
来源：第十五届全国等离子体科学技术会议 年份：2011
Silicon films are deposited using plasma enhanced chemical vapor deposition (PECVD) through SiH4-containing glow discharges [1].In this process,interactions between radicals (H,SiH,SiH2 and SiH3 et.al...
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