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搜索耗时3.6882秒,为你在为你在102,285,761篇论文里面共找到 9 篇相符的论文内容
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[期刊论文] 作者：Zhang Peng,Zhao Sheng-Lei,Hou Bin,Wang Chong,Zheng Xue-Feng,Ma Xiao-Hua,Zhang Jin-Cheng,
来源：中国物理B（英文版） 年份：2015
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,Investigation of trap states in Al2O3 InAlN/GaN metal-oxide-semiconductor high-electron-mobility tr
[期刊论文] 作者：Zhang Peng,Zhao Sheng-Lei,Xue Jun-Shuai,Zhu Jie-Jie,Ma Xiao-Hua,Zhang Jin-Cheng,Hao Yue,
来源：中国物理B（英文版） 年份：2015
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[期刊论文] 作者：Zhang Kai,Cao Meng-Yi,Lei Xiao-Yi,Zhao Sheng-Lei,Yang Li-Yuan,Zheng Xue-Feng,Ma Xiao-Hua,
来源：中国物理B（英文版） 年份：2013
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,Non-recessed-gate quasi-E-mode double heterojunction AlGaN/GaN high electron mobility transistor wi
[期刊论文] 作者：Mi Min-Han,Zhang Kai,Chen Xing,Zhao Sheng-Lei,Wang Chong,Zhang Jin-Cheng,Ma Xiao-Hua,
来源：中国物理B（英文版） 年份：2014
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,Reverse blocking enhancement of drain field plate in Schottky-drain AlGaN/GaN high-electron mobilit
[期刊论文] 作者：Zhao Sheng-Lei,Wang Yuan,Yang Xiao-Lei,Lin Zhi-Yu,Wang Chong,Zhang Jin-Cheng,Ma Xiao-Hua,
来源：中国物理B（英文版） 年份：2014
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,Influence of a drain field plate on the forward blocking characteristics of an AlGaN/GaN high elect
[期刊论文] 作者：Zhao Sheng-Lei,Chen Wei-Wei,Yue Tong,Wang Yi,Luo Jun,Mao Wei,Ma Xiao-Hua,
来源：中国物理B（英文版） 年份：2013
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,Mechanism of improving forward and reverse blocking voltages in AlGaN/GaN HEMTs by using Schottky d
[期刊论文] 作者：Zhao Sheng-Lei,Mi Min-Han,Hou Bin,Luo Jun,Wang Yi,Dai Yang,Zhang Jin-Cheng,
来源：中国物理B（英文版） 年份：2014
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,AlGaN Channel High Electron Mobility Transistors with Ultra-Low Drain-Induced-Barrier-Lowering Coef
[期刊论文] 作者：HA Wei,ZHANG Jin-Cheng,ZHAO Sheng-Lei,GE Sha-Sha,WEN Hui-Juan,ZHANG Chun-Fu,MA Xiao-Hua,
来源：中国物理快报（英文版） 年份：2013
The conventional AlGaN/GaN high electron mobility transistor (HEMT),the AlGaN/GaN/AlGaN HEMT,and the AlxGa1-xN/AlyGa1-yN HEMT are fabricated on sapphire substra...
,Trap States in Al2Oa InAlN/GaN Metal-Oxide-Semiconductor Structures by Frequency-Dependent Conducta
[期刊论文] 作者：ZHANG Peng,ZHAO Sheng-Lei,XUE Jun-Shuai,ZHANG Kai,MA Xiao-Hua,ZHANG Jin-Cheng,HAO Yue,
来源：中国物理快报（英文版） 年份：2014
We present a detailed analysis of the trap states in atomic layer deposition Al2O3/InAIN/GaN high electron mobility transistors grown by pulsed metal organic ch...
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