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Influences of increasing gate stem height on DC and RF performances of InAlAs/InGaAs InP-based HEMTs
[期刊论文] 作者：Zhi-Hang Tong,Peng Ding,Yong-Bo Su,Da-Hai Wang,Zhi Jin,
来源：中国物理B（英文版） 年份：2021
The T-gate stem height of InAlAs/InGaAs InP-based high electron mobility transistor (HEMT) is increased from 165 nm to 250 nm. The influences of increasing the...
The effect of metformin on beta cell function in non-obese patients with newly diagnosed type2 diabe
[会议论文] 作者：BI Yan1,YANG Hui-jie,PENG Zhi-hang,TONG Guo-yu,MA Jian-hua,LIANG Jun,XIN Bin,MIAO Heng,ZHU Da-long,
来源：中华医学会糖尿病学分会第十五次全国学术会议 年份：2012
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[期刊论文] 作者：Yan-Fu Wang,BO Wang,Rui-Ze Feng,Zhi-Hang Tong,Tong Liu,Peng Ding,Yong-Bo Su,Jing-Tao Zhou,Feng Yang,Wu-Chang,
来源：中国物理B（英文版） 年份：2022
Heterogeneous integrated InP high electron mobility transistors (HEMTs) on quartz wafers are fabricated successfully by using a reverse-grown InP epitaxial structure and benzocyclobutene (BCB) bonding technology.The channel of the new devic......
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