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[期刊论文] 作者:Zhi-Sheng Wu,Wen-Li Huang,Shu-, 来源:中华医学杂志(英文版) 年份:2019
Background:Epilepsy is a chronic and severe neurological disorder.Phosphatase and tensin homolog deleted on chromosome ten (PTEN)-deficient mice exhibit leing a...
[期刊论文] 作者:Ke Li,Zhi-sheng Wu,Cui-rong Li, 来源:矿物冶金与材料学报:英文版 年份:2014
有不锈钢电线的沉没弧焊(锯) 的弧特征被使用 Analysator Hannover 学习(啊) 。测试在电压与不同焊接电流相结合的一样的预设弧下面被执行。由比较分发(PDD ) 弧电压和焊接电...
[期刊论文] 作者:Ke Li,Zhi-sheng Wu,Cui-rong Liu,Feng-hua Chen,, 来源:International Journal of Minerals Metallurgy and Materials 年份:2014
The arc characteristics of submerged arc welding(SAW) with stainless steel wire were studied by using Analysator Hannover(AH). The tests were carried out under...
[期刊论文] 作者:Zhang Zhi-sheng,Wu Yi-lin,Xu Li-li,Yang Yuan-hua, 来源:中华医学杂志英文版 年份:1992
[期刊论文] 作者:Bin Li,Shan-Jin Huang,Hai-Long Wang,Hua-Long Wu,Zhi-Sheng Wu,Gang Wang,Hao Jiang, 来源:中国物理B(英文版) 年份:2017
The performance of an InGaN/GaN multiple quantum well (MQW) based visible-light Schottky photodiode (PD) is improved by optimizing the source flow of TEGa durin...
[期刊论文] 作者:Jie Chen,Pu-Man Huang,Xiao-Biao Han,Zheng-Zhou Pan,Chang-Ming Zhong,Jie-Zhi Liang,Zhi-Sheng Wu,Bai-Jun, 来源:中国物理B(英文版) 年份:
[期刊论文] 作者:Hai-Long Wang,Xiao-Han Zhang,Hong-Xia Wang,Bin Li,Chong Chen,Yong-Xian Li,Huan Yan,Zhi-Sheng Wu,Hao Jiang, 来源:中国物理B(英文版) 年份:2018
Indium-composition fluctuations in InGaN epitaxial layers are suppressed by using periodically-pulsed mixture (PPM) of N2 and H2 carrier gas. Photoluminescence,...
[期刊论文] 作者:Tao-Tao Que,Ya-Wen Zhao,Liu-An Li,Liang He,Qiu-Ling Qiu,Zhen-Xing Liu,Jin-Wei Zhang,Jia Chen,Zhi-Sheng Wu, 来源:中国物理B(英文版) 年份:2020
The effect of high overdrive voltage on the positive bias temperature instability (PBTI) trapping behavior is inves-tigated for GaN metal-insulator-semiconducto...
[期刊论文] 作者:Yue-Bo Liu,Hong-Hui Liu,Jun-Yu Shen,Wan-Qing Yao,Feng-Ge Wang,Yuan Ren,Min-Jie Zhang,Zhi-Sheng Wu,Yang, 来源:中国物理B(英文版) 年份:2021
The uniform distribution model of the surface donor states in AlGaN/GaN heterostructures has been widely used in the theoretical calculation.A common and a triple-channel AlGaN/GaN heterostructure Schottky barrier diodes have been fabricate......
[期刊论文] 作者:Zhao,Liu-An Li,Tao-Tao Que,Qiu-Ling Qiu,Liang He,Zhen-Xing Liu,Jin-Wei Zhang,Qian-Shu Wu,Jia Chen,Zhi-Sheng Wu, 来源:中国物理B(英文版) 年份:2020
We experimentally evaluated the interface state density of GaN MIS-HEMTs during time-dependent dielectric break-down (TDDB). Under a high forward gate bias stre...
[期刊论文] 作者:Xing,Wan-Qing Yao,Hong-Hui Liu,Ya-Qiong Dai,Long-Kun Yang,Feng-Ge Wang,Yuan Ren,Min-Jie Zhang,Zhi-Sheng Wu, 来源:中国物理B(英文版) 年份:2021
We report an abnormal phenomenon that the source-drain current (ID) of AlGaN/GaN heterostructure devices de-creases under visible light irradiation.When the incident light wavelength is 390 nm,the photon energy is less than the band gaps of......
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