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[期刊论文] 作者：Zhichuan Niu,
来源：国家科学评论（英文版） 年份：2017
Quantum dots are unique material structures in which the carriers are three-dimensionally confined and the intrinsic properties altered by the quantum effects t...
Room temperature continuous wave operation of 1.33-μm InAs/GaAs quantum dot laser with high output p
[期刊论文] 作者：Qin Han,Zhichuan Niu,Haiqiao N,
来源：黑龙江科技学院学报 年份：2006
为探究吕家坨井田地质构造格局,根据钻孔勘探资料,采用分形理论和趋势面分析方法,研究了井田7...
,Temperature dependence on the electrical and physical performance of InAs/AlSb heterojunction and h
[期刊论文] 作者：Jing Zhang,Hongliang Lv,Haiqiao Ni,Zhichuan Niu,Yuming Zhang,
来源：中国物理B（英文版） 年份：2018
In this report,the effect of temperature on the InAs/AlSb heterojunction and high-electron-mobility transistors(HEMTs)with a gate length of 2 μm are discussed...
[期刊论文] 作者：Pengyi Yue,Xiuming Dou,Xiangbin Su,Zhichuan Niu,Baoquan Sun,
来源：城市道桥与防洪 年份：2018
该文从挂篮荷载计算、施工流程、支座及临时固结施工、挂篮安装及试验、合拢段施工、模板制作安装、钢筋安装、混凝土的浇筑及养生、测量监控等方面人手,介绍了S226海滨大桥...
Low crosstalk three color infrared detector using InAs/GaSb superlattices for middle-long and-very l
[会议论文] 作者：Dongwei Jiang,Hongyue Hao,Xi Han,Guowei Wang,Yingqiang Xu,Zhichuan Niu,
来源：The 13th International Conference on Mid-Infrared Optoelectr 年份：2016
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[会议论文] 作者：Guowei Wang,Dongwei Jiang,Wei Xiang,Hongyue Haol,Xi Han,Yingqiang Xu,Zhichuan Niu,
来源：The 13th International Conference on Mid-Infrared Optoelectr 年份：2016
...
[期刊论文] 作者：Chen,Shulun Li,Xiangjun Shang,Xiangbin Su,Huiming Hao,Jiaxin Shen,Yu Zhang,Haiqiao Ni,Ying Ding,Zhichuan Niu,
来源：半导体学报:英文版 年份：2021
In this work,we achieve high count-rate single-photon output in single-mode(SM)optical fiber.Epitaxial and dilute InAs/GaAs quantum dots(QDs)are embedded in a GaAs/AlGaAs distributed Bragg reflector(DBR)with a micro-pillar cavity,so as to i......
Exciton emission dynamics in single InAs/GaAs quantum dots due to the existence of plasmon-field-ind
[期刊论文] 作者：Junhui Huang,Hao Chen,Zhiyao Zhuo,Jian Wang,Shulun Li,Kun Ding,Haiqiao Ni,Zhichuan Niu,Desheng Jiang,,
来源：中国物理B（英文版） 年份：2021
A very long lifetime exciton emission with non-single exponential decay characteristics has been reported for single InA-s/GaAs quantum dot (QD) samples,in which there exists a long-lived metastable state in the wetting layer (WL)through ra......
In situ tuning biexciton antibinding-binding transition and fine structure splitting through hydrost
[会议论文] 作者：Xuefei Wu,Hai Wei,Xiuming Dou,Kun Ding,Ying Yu,Haiqiao Ni,Zhichuan Niu,Desheng Jiang,Guangcan Guo,Lixin,
来源：第十七届全国凝聚态光学性质会议 年份：2014
The investigated (In,Ga)As/GaAs quantum dot (QD) samples with low QD density were grown using molecular beam epitaxy (MBE) on a semi-insulating GaAs substrate.S...
Understanding the role of interface in advanced semiconductor nanostructure and its interplay with w
[期刊论文] 作者：Chenyuan Cai,Yunhao Zhao,Faran Chang,Xuebing Zhao,Liting Yang,Chongyun Liang,Guowei Wang,Zhichuan Niu,
来源：纳米研究（英文版） 年份：2020
As the proportion of interfaces increases rapidly in nanomaterials,properties and quality of interfaces hugely impact the performance of advanced semiconductors...
[期刊论文] 作者：Weixuan Zhang,Xin Xie,Huiming Hao,Jianchen Dang,Shan Xiao,Shushu Shi,Haiqiao Ni,Zhichuan Niu,Can Wang,
来源：光：科学与应用（英文版） 年份：2020
Topological lasers are immune to imperfections and disorder. They have been recently demonstrated based on many kinds of robust edge states, which are mostly at...
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