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Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ul
[期刊论文] 作者：徐昊,杨红,罗维春,徐烨峰,王艳蓉,唐波,王文武,祁路伟,李俊峰,闫江,朱慧珑,赵超,陈大鹏,叶甜春,,
来源：Chinese Physics B 年份：2016
The thickness effect of the TiN capping layer on the time dependent dielectric breakdown(TDDB) characteristic of ultra-thin EOT high-k metal gate NMOSFET is inv...
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