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[期刊论文] 作者：张望,韩伟华,吕奇峰,王昊,杨富华,,
来源：微纳电子技术 年份：2016
从器件结构和电学特性等方面,对具有垂直结构和水平结构的Ⅲ-Ⅴ族纳米线晶体管的最新研究进展进行了综述。对于垂直器件,虽然高质量的垂直Ⅲ-Ⅴ族纳米线易于获得,但栅极的逻...
Electronic transport properties of silicon junctionless nanowire transistors fabricated by femtoseco
[期刊论文] 作者：马刘红,韩伟华,王昊,吕奇峰,张望,杨香,杨富华,,
来源：Chinese Physics B 年份：2016
Silicon junctionless nanowire transistor(JNT) is fabricated by femtosecond laser direct writing on a heavily n-doped SOI substrate.The performances of the trans...
Electric-field-dependent charge delocalization from dopant atoms in silicon junctionless nanowire tr
[期刊论文] 作者：王昊,韩伟华,赵晓松,张望,吕奇峰,马刘红,杨富华,,
来源：Chinese Physics B 年份：2016
We study electric-field-dependent charge delocalization from dopant atoms in a silicon junctionless nanowire transistor by low-temperature electron transport me...
Electric-field-dependent charge delocalization from dopant atoms in silicon junctionless nanowire tr
[期刊论文] 作者：王昊,韩伟华,赵晓松,张望,吕奇峰,马刘红,杨富华,,
来源：Chinese Physics B 年份：2016
We study electric-field-dependent charge delocalization from dopant atoms in a silicon junctionless nanowire transistor by low-temperature electron transport measurement. The Arrhenius plot of the tem...
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