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[期刊论文] 作者:揭斌斌,薩支唐,, 来源:半导体学报 年份:2009
This paper describes the definition of the complete transistor.For semiconductor devices,the complete transistor is always bipolar,namely,its electrical charact...
[期刊论文] 作者:薩支唐,揭斌斌,, 来源:半导体学报 年份:2009
This paper reports the physical realization of the Bipolar Field-Effect Transistor (BiFET) and its onetransistor basic building block circuits. Examples are giv...
[期刊论文] 作者:揭斌斌,薩支唐,, 来源:半导体学报 年份:2009
This paper reports the DC steady-state current-voltage and conductance-voltage characteristics of a Bipolar Field-Effect Transistor(BiFET) under the unipolar(el...
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