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Effects of Oxygen Vacancy on the Electronic Structure of Monoclinic HfO2 and Its Defect Energy State
[期刊论文] 作者：TAN Ting-Ting,CHEN Xi,GUO Ting-Ting,LIU Zheng-Tang,
来源：黑龙江科技信息 年份：2013
本文通过对荣华二采区10...
,Bipolar Resistive Switching Characteristics of TiN/HfOx/ITO Devices for Resistive Random Access Mem
[期刊论文] 作者：TAN Ting-Ting,CHEN Xi,GUO Ting-Ting,LIU Zheng-Tng,
来源：中国物理快报（英文版） 年份：2013
Resistive switching characteristics of hafnium oxide are studied for possible nonvolatile memory device applications.The HfOx films with different oxygen conten...
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