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[期刊论文] 作者：Jianing Guo,Dongli Zhang,Mingxiang Wang,Huaisheng Wang,
来源：中国物理B（英文版） 年份：2021
A new type of degradation phenomena featured with increased subthreshold swing and threshold voltage after negative gate bias stress (NBS) is observed for amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs),which can recover in a short ......
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