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[期刊论文] 作者：Venkat Hariharan,Jignesh Vanjaria,Arul Chakkaravarthi Arjunan,Gary S. Tompa,Hongbin Yu,
来源：晶体结构理论与应用(英文) 年份：2021
In the past studies have shown that the addition of Ge and Sn into Si lattice to form SiGeSn enhances its carrier mobility and band-gap properties. Conventionally SiGeSn epitaxial films are grown using Ultra-High Vacuum (UHV) conditions wit......
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