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,Microstructure Study on Heterostructures of AlInGaN/GaN/Al2O3 by Using Rutherford Backscattering/Ch
[期刊论文] 作者：WANG Huan,YAO Shu-De,PAN Yao-Bo,YU Tong-Jun,ZHANG Guo-Yi,
来源：中国物理快报（英文版） 年份：2006
A quateary AlInGaN layer is grown by metal-organic chemical vapour deposition on a sapphire (0001) substrate with a thick (＞ 1 μm) GaN intermediate layer....
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