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[会议论文] 作者：Y.F.Sun,J.D.Sun,Y.Zhou,Z.P.Zhang,C.H.Zen,H.Qin,B.S.Zhang,D.M.Wu,
来源：The 5th International Symposium on Ultra-fast Phenomena & Te 年份：2010
We report on the fabrication and characterization of a novel terahertz detector based on the GaN/AIGaN high electron mobility transistor (HEMT) which includ...
[会议论文] 作者：Y.F.Sun[1]J.D.Sun[2]Y.Zhou[2]Z.P.Zhang[2]C.H.Zen[2]H.Qin[2]B.S.Zhang[2]D.M.Wu[1],
来源：The 5th International Symposium on Ultra-fast Phenomena & 年份：2010
We report on the fabrication and characterization of a novel terahertz detector based on the GaN/AIGaN high electron mobility transistor (HEMT) which includ...
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