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[期刊论文] 作者：Ying-Xi Niu,Xiao-Yan Tang,Ren-Xu Jia,Ling Sang,Ji-Chao Hu,Fei Yang,Jun-Min Wu,Yan Pan,Yu-Ming Zhang,
来源：中国物理快报（英文版） 年份：2018
Effect of triangle structure defects in a 180-μm-thick as-grown n-type 4H-SiC homoepitaxial layer on the carrier lifetime is quantitatively analyzed,which is g...
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