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[期刊论文] 作者：Zhang Chonghong,Sun Youmei,Son,
来源：近代物理研究所和兰州重离子加速器实验室年报：英文版 年份：2004
Gallium nitride (GaN) has received great attention because its outstanding properties are suitable for the development of novel microelectronic and optoelec...
[期刊论文] 作者：Song Yin Zhang Chonghong Wang,
来源：近代物理研究所和兰州重离子加速器实验室年报：英文版 年份：2004
In the present work, sapphire single crystals were implanted with 110 keV He ions at 320 and 600 K temperature to doses ranging from (0.5 to 2)×1017 io...
[期刊论文] 作者：Zhang Chonghong,Song Yin,Sun Y,
来源：近代物理研究所和兰州重离子加速器实验室年报：英文版 年份：2004
Gallium nitride (GaN) has received great attention because its outstanding properties are suitable for the development of novel microelectronic and optoelec...
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