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Aqueous-solution-driven HfGdOx gate dielectrics for low-voltage-operated α-InGaZnO transistors and i
[期刊论文] 作者：Yongchun Zhang,Gang He,Wenhao Wang,Bing Yang,Chong Zhang,Yufeng Xia,
来源：材料科学技术（英文版） 年份：2020
In this work,a non-toxic and environmentally friendly aqueous-solution-based method has been adopted to prepare gadolinium-doped hafnium oxide (HfO2) gate diele...
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