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[期刊论文] 作者：Yan-Fu Wang,BO Wang,Rui-Ze Feng,Zhi-Hang Tong,Tong Liu,Peng Ding,Yong-Bo Su,Jing-Tao Zhou,Feng Yang,Wu-Chang,
来源：中国物理B（英文版） 年份：2022
Heterogeneous integrated InP high electron mobility transistors (HEMTs) on quartz wafers are fabricated successfully by using a reverse-grown InP epitaxial structure and benzocyclobutene (BCB) bonding technology.The channel of the new devic......
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