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,Effects of Hydrogen Treatment in Barrier on the Electroluminescence of Green InGaN/GaN Single-Quant
[期刊论文] 作者：Qing-feng Wu,Sheng Cao,Chun-lan Mo,Jian-li Zhang,Xiao-lan Wang,Zhi-jue Quan,Chang-da Zheng,Xiao-ming,
来源：中国物理快报（英文版） 年份：2018
Effect of hydrogen (H2) treatment during the GaN barrier growth on the electroluminescence performance of green InGaN/GaN single-quantum-well light-emitting dio...
[期刊论文] 作者：Zong-Shun Liu,Jian-Jun Zhu,Ping Chen,Jing Yang,Wei Liu,Feng Liang,Shuang-Tao Liu,Li-Qun Zhang,Wen-Jie Wang,Mo,
来源：中国物理B（英文版） 年份：2018
In order to suppress the electron leakage to p-type region of near-ultraviolet GaN/InxGa1-xN/GaN multiple-quantumwell (MQW) laser diode (LD),the Al composition...
[期刊论文] 作者：Zhao-Hong Mo,Chao Lu,Yi Liu,Wei Feng,Yun Zhang,Wen Zhang,Shi-Yong Tan,Hong-Jun Zhang,Chun-Yu Guo,Xiao-Dong,
来源：中国物理B（英文版） 年份：2018
Bilayer superconducting films with tunable transition temperature (Tc) are a critical ingredient to the fabrication of high-performance transition edge sensors....
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