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,Effect of Interface Roughness and Dislocation Density on Electroluminescence Intensity of InGaN Mul
[期刊论文] 作者：ZHAO De-Gang,JIANG De-Sheng,ZHU Jian-Jun,LIU Zong-Shun,ZHANG Shu-Ming,WANG Yu-Tian,YANG Hui,
来源：中国物理快报（英文版） 年份：2008
Effects of interface roughness and dislocation density on the electroluminescence (EL) intensity of In GaN multiplem quantum wells (MQWs) are investigated. It i...
[期刊论文] 作者：ZHU Ji-Hong,ZHANG Shu-Ming,SUN Xian,ZHAO De-Gang,ZHU Jian-Jun,LIU Zong-Shun,JIANG De-Sheng,DUAN Li-Hong,
来源：中国物理快报（英文版） 年份：2008
InGaN/GaN-multiple-quantum-well-based light emitting diode (LED) nanopillar arrays with a diameter of ap proximately 20Onm and a height of 70Onto are fabricated...
[期刊论文] 作者：ZHANG Li-Qun,ZHANG Shu-Ming,YANG Hui,CAO Qing,JI Lian,ZHU Jian-Jun,LIU Zong-Shun,ZHAO De-Gang,JIANG De-Sheng,
来源：中国物理快报（英文版） 年份：2008
Room-temperature operation of cw GaN based multi-quantum-well laser diodes (LDs) is demonstrated. The LD structure is grown on a sapphire (0001) substrate by me...
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