ε-Ga2O3相关论文
ε-Ga_2O_3作为氧化镓五个多晶型物中的第二热力学稳定相,具有禁带宽度大、铁电性能优越、自发极化性质强等优点,这使得ε-Ga_2O_3......
Ga_2O_3作为一种超宽禁带半导体新型材料,不仅具有超宽的带隙(高达4.9e V),较高的临界击穿电场(高达8MV/cm),而且在高温下还具有出......
Band alignment of p-type oxide/e-Ga2O3 heterojunctions investigated by x-ray photoelectron spectrosc
The ε-Ga2O3 p-n heterojunctions (HJ) have been demonstrated using typical p-type oxide semiconductors (NiO or SnO).The ......
Band alignment of p-type oxide/ε-Ga2O3 heterojunctions investigated by x-ray photoelectron spectrosc
Theε-Ga2O3 p-n heterojunctions(HJ)have been demonstrated using typical p-type oxide semiconductors(NiO or SnO).Theε-Ga......
氧化镓是一种新型的氧化物半导体材料,它具备较宽的禁带宽度、较小的导通电阻、较高的击穿场强以及优良的热稳定性和物化稳定性。......