hall-effect相关论文
Pressure-induced electrical transport properties of InN including electrical resistivity, Hall coefficient,carrier conce......
Al x Ga 1-x N/GaN high-electron-mobility transistor (HEMT) structures with Al composition ranging from x = 0.13 to 0.36 ......
...
在原理上使用霍尔效应进行电流检测;在结构上使用差动磁路进行了温度的修正,使用CMOS技术拥有更高的集成度;在精度上使用STM32单片......
采用线性霍尔电路和永磁体,基于悬臂梁弹性体系统,研制了一种霍尔式肌张力换能器。2个线性霍尔电路以永磁体为对称中心,构成对称互......
Magnet Formation by the Surface Modification of Diamond with Manganese Detected by the Magnetic Flux
A surface modification of diamond with manganese powder was attempted to make a magnetic functional surface for handling......
给出了载流子迁移率的各种测量方法,渡越时间(TOP)法、霍尔效应法、电压衰减法、辐射诱发导电率(SIC)法、表面波传输法、外加电场极性......
针对在运货物位移状态监控需求与现状,设计集成射频识别技术和传感技术的新型有源电子标签。在分析霍尔传感的基本原理和设计思路......