Points defects in epitaxial silicene on Ag(111)surface

来源 :The 6th International Conference on Nanoscience and Technolo | 被引量 : 0次 | 上传用户：woxuejavalala

【摘要】

：

　　Silicene,a counterpart of graphene,has achieved rapid development in recent years due to its exotic electronic properties and its compatibility with the mat

【作者】

：

HongshengLiu[1]HaifengFeng[2]YiDu[2]JianChen[3]KehuiWu[3]JijunZhao[1]

【机构】

：

Key Laboratory of Materials Modification by Laser,Ion and Electron Beams(Dalian University of Techno

【出处】

：

The 6th International Conference on Nanoscience and Technolo

【发表日期】

：

2015年期

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　　Silicene,a counterpart of graphene,has achieved rapid development in recent years due to its exotic electronic properties and its compatibility with the mature silicon-based semiconductor technology.The recent success in experimentally fabricating silicene-based field effect transistors has opened a door to the application of silicene in future nanoelectronic devices.

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Points defects in epitaxial silicene on Ag(111)surface

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