In situ asymmetric island sidewall growth(AISG)was developed to improve the crystalline quality of the(11-22)GaN films on m-sapphire.By AISG the Ga-face facet growth along the +c [0001] inclined direc
Effect of a polarized P(VDF-TrFE)ferroelectric polymer gating on AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors(MOS-HEMTs)was investigated(Figure 1).The P(VDF-TrFE)gating in th
By Mg pretreatment of the bottom GaN barrier surface,the growth behavior of the high indium content InGaN/GaN quantum wells(QWs)changed greatly;the interface quality and luminescence capability were s