稀氮(Ga(In)AsN)材料及其辐射效应

来源 :2019第二届光电材料与器件战略论坛 | 被引量 : 0次 | 上传用户:rr2009
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  本文研究了不同注量(1×1015、1×1016e/cm2)1MeV 电子辐照和辐照后不同温度热退火(650℃、750℃、850℃)对GaAsN/GaAs 和GaInAsN/GaAs 单量子阱的影响,并结合Mulassis 仿真、高分辨率x 射线衍射(HR-XRD)和PL 光谱进行对其分析讨论。
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