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Resistive switching phenomenon based on the redox-induced conductivity change in some solid-elelctrolyte insulator attracts considrable interest as a new technology for nonvolatile memory,analog circuits and neuromorphic applications.The resistance switching is based on the growth and dissolution of conductive filaments in the solid electrolyte insultator under the external power.The resistive switching phenomenon is generally classified to threshold and memory switching based on the resistance states is maintained after removing external voltage.Interestingly,threshold and memory switching phenomenon can be coexistence and conversion in a single device at suitable external excitation,however,the underline mechanism of the phenomenon is still unclear.