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5. Atomic Diffusion and Interface Reaction of Cu/Si(111) Films Prepared by Ionized Cluster Beam Deposit

Atomic Diffusion and Interface Reaction of Cu/Si(111) Films Prepared by Ionized Cluster Beam Deposit

来源 :The 17th International Conference on Surface Modification of | 被引量 : 0次 | 上传用户：wushaojunbaobao3

【作 者】

：

B.Cao G.P.Li S.J.Cho H.Kim 

【机 构】

：

School of Nuclear Science and Engineering, North China Electric Power University, Beijing, 102206,Ch

【出 处】

：

The 17th International Conference on Surface Modification of

【发表日期】

：

2011年3期

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