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A common-base four finger InGaAs/InP double heterostructure bipolar transistor (DHBT) has been designed and fabricated using triple mesa structure and planarization technology.All processes are on 3-inch wafers.The area of each emitter finger is 0.5×7μm2.The maximum oscillation frequency (fmax) is 416 GHz and the breakdown voltage BVCBO is 4V, which are to our knowledge both the highest fmax and BVCBO ever reported for InGaAs/InP DHBTs in china.The high speed InGaAs/InP DHBT with high breakdown voltage is promising for submillimeter-wave and THz electronics.